Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs | New Product Brief

This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.

SSM6K Silicon N-Channel Small Signal MOSFETs

Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs are compact, low-profile, and designed for use in power management and high-speed switching in small, mobile devices. The SSM6K are available with a V_DSS range of 12 to 60 V and have R_DS,ON as low as 6.5 mΩ, but still support drain power dissipation from 500 mW to 1 W. The low on-resistance reduces heat dissipation by up to 40% versus competing devices.

Multiple packages are available, including the ultra-small WCSP6C package that measures 1.5 x 1.0 x 0.5 mm with a 0.5 mm pitch. Toshiba SSM6K series of N-Channel MOSFETs are suitable for load switching applications over 10 W, including devices using USB Type-C and USB Power Delivery standards.

• V_DSS: 12 V to 60 V
• Continuous drain current: Up to 15 A
• Drain power dissipation: 500 mW to 1 W
• Channel temperature: 150°C
• R_DS,On: 6.5 mΩ to 400 mΩ
• Packages: UDFN6B-6, ES6-6, UF6-6, WCSP6C-6

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